Shenzhen Zesheng Semiconductor Technology Co., Ltd.
Shenzhen Zesheng Semiconductor Technology Co., Ltd.
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Transistor New And Original FCH041N60F Integrated Circuit MOSFET In Stock
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 36 m
• Ultra Low Gate Charge (Typ. Qg = 277 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF)
• 100% Avalanche Tested
• This Device is Pb−Free and is RoHS Compliant
| Specifications | |
| Product Attribute | Attribute Value |
| Manufacturer: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Id - Continuous Drain Current: | 76 A |
| Rds On - Drain-Source Resistance: | 36 mOhms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Qg - Gate Charge: | 277 nC |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 595 W |
| Channel Mode: | Enhancement |
| Tradename: | SuperFET II FRFET |
| Series: | FCH041N60F |
| Packaging: | Tube |
| Brand: | onsemi / Fairchild |
| Configuration: | Single |
| Fall Time: | 53 ns |
| Forward Transconductance - Min: | 64.5 S |
| Height: | 20.82 mm |
| Length: | 15.87 mm |
| Product Type: | MOSFET |
| Rise Time: | 66 ns |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 244 ns |
| Typical Turn-On Delay Time: | 63 ns |
| Width: | 4.82 mm |
| Unit Weight: | 0.211644 oz |
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